Before Qimonda’s unfortunate demise last year, they delivered an impressive paper at IEDM  describing a “buried wordline” (BwL). Memory chip supplier Qimonda says it is about to begin commercial production of DRAM chips using its new “Buried Wordline” technology. Provided are a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried within a substrate to reduce.
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The capping layer may be formed of an insulating material e. Like reference numerals refer to like elements throughout. Dual work function bruied gate type transistor, method for manufacturing the same and electronic device having the same. This has the dual advantages of a leaner, thus cheaper, process, and also reduced power consumption, since there is less parasitic capacitance between the bitlines and the wordlines see below.
The semiconductor device of claim 1wherein the upper buried word line includes a silicide. The lower buried word line may comprise polysilicon.
Furthermore, because the lower buried word line may be formed of polysilicon, a reduction of the aspect ratio is obtained. Capacitor with electrodes made of ruthenium and method for patterning layers made of ruthenium or ruthenium IV oxide.
The buried word line may comprise any one selected from the group consisting of tungsten Waluminum Alcupper Cu wordoine, molybdenum Motitanium Titantalum Taand ruthenium Ruor a combination thereof. The trench may have a width within a range of about 10 to about nm.
Thus, the above structure is not ideal for embodying a thinner device. The Qimonda slide below shows the difference in structure; on the left is the buried wordline in redsunk into the substrate silicon, wkrdline on the right is an oriental competitor using a spherical recess-channel transistor with the tungsten part of the gate highlighted in red.
Line C illustrates gate voltage-current characteristics of a device including a gate electrode layer formed of polysilicon having a thickness of about 4 nm and a buried wordkine line formed of titanium worline TiNaccording to example embodiments as described above with reference to FIGS. It will worxline understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
The upper buried word line may be formed of a material different from that of the lower buried word line. As a result, reliability of the device is reduced. Semiconductor structure and manufacturing method to avoid the problem of hammering column. The buried word line may be formed by recessing the polished word line layer into the substrate using a partial etch burued. The upper buried word line may be formed by recessing the polished second word line layer into the substrate Winbond has introduced the technology at the nm node, but they also have nm parts under development.
Example embodiments provide a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried inside of a substrate, thereby reducing the height of the semiconductor device and the degradation of oxide layers due to the application of a TiN metal gate. As such, the deposition of the metal that forms the upper buried word line may be performed more easily.
Eordline forming of the lower buried word line may comprise wordlnie a first word line layer on the substrate so as to bury the trench, polishing the first word line layer using chemical mechanical polishing and an etch-back method which uses a dry etch to expose the surface of the substrate, and recessing the polished first word line layer into the substrate to form the lower buried word line.
The burieed may be otherwise oriented rotated 90 degrees or at other orientations and the spatially relative descriptors used herein interpreted accordingly. Apparatuses and methods for improving retention performance of hierarchical digit lines. However, example embodiments are not limited to the embodiments illustrated hereinafter, and the embodiments herein are rather introduced to provide easy and complete understanding of the scope and spirit of example embodiments.
The semiconductor device may comprise a semiconductor substrate defined by a device isolation layer and comprising an active region including aordline trench and one or more recess channels, a gate isolation layer on the surface of the trench, a gate electrode layer on the surface of the gate isolation layer, and a word line by which the trench may be buried on the surface of the wordlien electrode layer.
The semiconductor device of claim 1wherein the gate insulating layer is a thermal oxide layer.
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In example embodiments, the upper buried word line may include a silicide. As described above, the electrical resistance of the word line of the buried word line composed of the lower buried word line and the upper buried word line may be lower when the upper buried word line includes silicide and metal material. Semiconductor devices including a field effect transistor and methods of the same. A trench forming a recess channel within the active region defined by the device isolation layer may be formed.
Structure for reducing leakage currents and high contact resistance for embedded memory and method for making same.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. The size of the recessed region of the gate insulating layerthe gate electrode layerand the buried word line may be equal to wodline maybe different from each other.
6F2 buried wordline DRAM cell for 40nm and beyond – Semantic Scholar
The forming of the upper buried word line may comprise forming a second word line layer on the substrate so as to bury the trench in which the lower buried word line is formed, polishing the second word line layer using chemical mechanical polishing and an etch back method which uses dry etch to expose the surface of the substrate, and recessing the polished second word line layer into the substrate to form the upper buried word line.
The buried word line may be formed using a chemical vapor deposition, a physical vapor deposition PVDor an atomic layer deposition method. As such, the degradation of the oxide layer, which may be caused by the formation of the titanium nitride layer, may be reduced or prevented.
The semiconductor device of claim 1wherein the upper buried word line includes at least one of tungsten Waluminum AlCopper Cumolybdenum Motitanium Titantalum Taand ruthenium Ru. Comments won’t automatically be posted to your social media accounts unless you select to share. The gate electrode layer may have a thickness within a range of about 1 to about 10 nm.
As such, control of the diffusion length may be more easily performed.
6F2 buried wordline DRAM cell for 40nm and beyond
The lower buried word line may be formed by forming a first word line layer not shown on the substrate so as to bury the trench In wordlihe semiconductor device, the metal gate electrode 20 is buried into the substrate 10 and also protrudes beyond the surface wordlune substrate, and accordingly, the spacer 24 for supporting the metal gate electrode 20 is required. Reference will now be made in detail to example embodiments, examples of which are illustrated in the accompanying drawings.
The buried word line may be formed by forming a word line layer on the substrate so as to bury the trench